Radiative lifetime in semiconductors for infrared detection

摘要: Abstract In a previous paper, it was shown that the performance limit of purely radiative IR photon detectors is background limit, and lifetime van Roosbroeck Shockley greatly modified by reabsorption effects. This paper extends treatment to partially radiatively limited materials in more general way not restricted small signal conditions. It widespread use internal as limiting factor detector incorrect 25 or more, (the same relates external luminescence efficiencies) correct form including effects derived. The detectivity photoconductive calculated for range efficiencies. Large improvements are fundamentally possible if material quality can be improved.