Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures
作者： M. Geddo , M. Patrini , G. Guizzetti , M. Galli , R. Trotta
DOI: 10.1063/1.3597818
关键词: Wide-bandgap semiconductor 、 Optoelectronics 、 Refractive index 、 Heterojunction 、 Passivation 、 Materials science 、 Gallium arsenide 、 Irradiation 、 Annealing (metallurgy) 、 Band gap
摘要: The effect of hydrogen irradiation on the optical properties GaAs1−xNx/GaAs heterostructures was investigated using photoreflectance and reflectance techniques. Systematic measurements performed both as-grown hydrogenated samples for N-concentrations ranging from 0.0% to 3.5% H-implanted doses 3 × 1018 6 × 1018 ions/cm2 have shown that (a) H-induced widening energy gap is accompanied by a decrease refractive index H-treated with respect ones, resulting in an mismatch can be as large 2% subgap spectral region; (b) presence compressive strain fully passivated GaAsN determines even below GaAs eliminated via moderate thermal annealing. These findings are promising development planar geometry, which simultaneous confinement carriers photons, nanometric scale, obtained single ...
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aip.org 参考文章(33)
Fan Jiang, Michael Stavola, M. Capizzi, A. Polimeni, A. Amore Bonapasta, F. Filippone, Vibrational spectroscopy of hydrogenated GaAs1-yNy: A structure-sensitive test of an H2*(N) model Physical Review B. ,vol. 69, pp. 413091- 413094 ,(2004) , 10.1103/PHYSREVB.69.041309
R. Trotta, A. Polimeni, M. Capizzi, D. Giubertoni, M. Bersani, G. Bisognin, M. Berti, S. Rubini, F. Martelli, L. Mariucci, M. Francardi, A. Gerardino, Effect of hydrogen incorporation temperature in in plane-engineered GaAsN/GaAsN:H heterostructures Applied Physics Letters. ,vol. 92, pp. 221901- ,(2008) , 10.1063/1.2939000
D.E. Aspnes, Third-derivative modulation spectroscopy with low-field electroreflectance Surface Science. ,vol. 37, pp. 418- 442 ,(1973) , 10.1016/0039-6028(73)90337-3
G. Bisognin, D. De Salvador, E. Napolitani, M. Berti, A. Polimeni, M. Capizzi, S. Rubini, F. Martelli, A. Franciosi, High-resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides Journal of Applied Crystallography. ,vol. 41, pp. 366- 372 ,(2008) , 10.1107/S0021889807068094
G Ciatto, Federico Boscherini, A Amore Bonapasta, F Filippone, Antonio Polimeni, Mario Capizzi, None, Nitrogen-hydrogen complex in Ga Asx N1-x revealed by x-ray absorption spectroscopy Physical Review B. ,vol. 71, pp. 201301- ,(2005) , 10.1103/PHYSREVB.71.201301
I. Vurgaftman, J. R. Meyer, Band parameters for nitrogen-containing semiconductors Journal of Applied Physics. ,vol. 94, pp. 3675- 3696 ,(2003) , 10.1063/1.1600519
Yong Zhang, A. Mascarenhas, H. P. Xin, C. W. Tu, Valence-band splitting and shear deformation potential of dilute GaAs 1 − x N x alloys Physical Review B. ,vol. 61, pp. 4433- 4436 ,(2000) , 10.1103/PHYSREVB.61.4433
W. Shan, W. Walukiewicz, J. W. Ager, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, S. R. Kurtz, Band Anticrossing in GaInNAs Alloys Physical Review Letters. ,vol. 82, pp. 1221- 1224 ,(1999) , 10.1103/PHYSREVLETT.82.1221
Stefan Zollner, Model dielectric functions for native oxides on compound semiconductors Applied Physics Letters. ,vol. 63, pp. 2523- 2524 ,(1993) , 10.1063/1.110469
Gabriele Bisognin, Davide De Salvador, AV Drigo, Enrico Napolitani, A Sambo, Marina Berti, Antonio Polimeni, Marco Felici, Mario Capizzi, M Güngerich, PJ Klar, G Bais, F Jabeen, M Piccin, S Rubini, F Martelli, Alfonso Franciosi, None, Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain Applied Physics Letters. ,vol. 89, pp. 061904- ,(2006) , 10.1063/1.2335508