Hydrogen incorporation in III-N-V semiconductors: From macroscopic to nanometer control of the materials' physical properties
作者： Rinaldo Trotta , Antonio Polimeni , Mario Capizzi
关键词: Semiconductor 、 Nanotechnology 、 Diffusion 、 Irradiation 、 Nitride 、 Hydrogen 、 Quantum dot 、 Materials science 、 Nanometre 、 Photoluminescence
摘要: The effects of hydrogen incorporation in dilute nitride semiconductors, specifically GaAs1-xNx, are discussed. remarkable consequences irradiation include tuneable and reversible changes the electronic, optical, structural, electrical properties these materials. highly trapping-limited diffusion H atoms nitrides results formation extremely sharp heterointerfaces between H-containing H-free regions crystals. This, turn, offers an unprecedented possibility to tailor physical a semiconductor chip its growth plane with nanometer precision. A number examples presented
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