Effects of hydrogenation on the local structure ofInxGa1−xAs1−yNyquantum wells andGaAs1−yNyepilayers
作者： G. Ciatto , H. Renevier , M. G. Proietti , A. Polimeni , M. Capizzi
DOI: 10.1103/PHYSREVB.72.085322
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摘要: We address in this paper the issue of effects hydrogenation on local structure In{sub x}Ga{sub 1-x}As{sub 1-y}N{sub y} quantum wells by combining In K-edge x-ray absorption and Ga diffraction anomalous fine experiments. found that cation-As bond lengths hydrogenated samples are systematically longer than values predicted a valence force field model corrected for epitaxial strain. interpret stretching as effect formation N-H complexes very recently theoretical calculations. By analyzing Debye-Waller factor Ga-As length distribution, we observed removes static disorder induced N incorporation GaAs; is due to unique characteristics substitutional anion breaking ionic Ga-N bonds upon hydrogenation.
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