Nanoscale tailoring of the polarization properties of dilute-nitride semiconductors via h-assisted strain engineering

作者: Marco Felici , Simone Birindelli , Rinaldo Trotta , Marco Francardi , Annamaria Gerardino

DOI: 10.1103/PHYSREVAPPLIED.2.064007

关键词: Materials scienceOptoelectronicsStrain engineeringNitride semiconductorsNanoscopic scalePolarization (electrochemistry)

摘要:

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