Quality-enhanced In0.3Ga0.7As film grown on GaAs substrate with an ultrathin amorphous In0.6Ga0.4As buffer layer
作者： Fangliang Gao , Guoqiang Li
DOI: 10.1063/1.4863232
关键词: Epitaxy 、 Buffer (optical fiber) 、 Crystallinity 、 Substrate (electronics) 、 Molecular beam epitaxy 、 Amorphous solid 、 Optoelectronics 、 Materials science 、 Layer (electronics) 、 Gallium arsenide
摘要: Using low-temperature molecular beam epitaxy, amorphous In0.6Ga0.4As layers have been grown on GaAs substrates to act as buffer for the subsequent epitaxial growth of In0.3Ga0.7As films. It is revealed that crystallinity as-grown films strongly affected by thickness large-mismatched layer. Given an optimized 2 nm, this layer can efficiently release misfit strain between epi-layer and substrate, trap threading dislocations from propagating following epi-layer, reduce surface fluctuation In0.3Ga0.7As, leading a high-quality film with competitive substrate using compositionally graded InxGa1-xAs metamorphic layers. Considering complexity application conventional layers, work demonstrates much simpler a...
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