Argon incorporation on silicon carbide thin films deposited by bias co-sputtering technique

摘要: ABSTRACT The influence of negative substrate bias on the chemical, electrical and mechanical properties silicon carbide (SiC) thin films deposited onto (100) by dc magnetron co-sputtering without external heating is reported. These studies were performed using following techniques: Rutherford backscattering spectroscopy (RBS), profilometry, Raman spectroscopy, four-point probe method nanoindentation. results indicate that there a good correlation between voltage argon incorporation into SiC film, namely, under –200 V –300 have higher content elastic modulus hardness than those at 0 V. An opposite behavior was found for resistivity: has resistivity 0.45 Ω.cm whereas 7.0 Ω.cm. INTRODUCTION potential use sputtered devices applications stimulated extensive research growth conditions structural, optical, these [1-2]. Many researches been characterization produced variety varying gas flow rate, temperature, rf power, among others. Special attention given to investigation how contaminants affects [3-5]. can be intentional (i.e. when doping introduced during film growth) or unintentional elements present in deposition system are incorporated film). most widely studied contamination oxygen process. In recent years, sources control them considerably reported [6-7]. However, less effort made investigate their properties. ions (Ar