Effect of nitrogen content in amorphous SiCxNyOz thin films deposited by low temperature reactive magnetron co-sputtering technique
作者： HS Medeiros , RS Pessoa , JC Sagás , MA Fraga , LV Santos
DOI: 10.1016/J.SURFCOAT.2011.09.062
关键词:
摘要: … However, the oxygen contamination of these films and consequent formation of SiCO and SiCNO films can be quite attractive for some applications. SiCO films have been studied as …
core.ac.uk
elsevier.com
sci-hub.se 参考文章(77)
Guoju Wang, Bo Wang, Anping Huang, Mankang Zhu, Biben Wang, Hui Yan, Effects of CF4 addition on oxygen contamination of SiC films in hot filament chemical vapor deposition using CH4+SiH4+H2 Journal of Vacuum Science and Technology. ,vol. 21, pp. 1993- 1995 ,(2003) , 10.1116/1.1622674
Lide Zhang, Yan Yan, Shu-Lin Zhang, Shoushan Fan, Weiqiang Han, Guomen Meng, Effect of changing incident wavelength on Raman features of optical phonons in SiC nanorods and TaC nanowires Solid State Communications. ,vol. 126, pp. 649- 651 ,(2003) , 10.1016/S0038-1098(03)00236-9
I. Nakaaki, N. Saito, Optical, electrical and structural properties of amorphous SiCN:H films prepared by rf glow-discharge decomposition Applied Surface Science. ,vol. 169-170, pp. 468- 471 ,(2001) , 10.1016/S0169-4332(00)00728-5
C. Spaeth, U. Kreissig, F. Richter, Sputtering and chemical erosion during CNx synthesis by ion beam assisted filtered cathodic arc evaporation Thin Solid Films. ,vol. 355, pp. 64- 72 ,(1999) , 10.1016/S0040-6090(99)00482-4
A.R. Oliveira, M.N.P. Carreño, N and p-type doping of PECVD a-SiC:H obtained under “silane starving plasma” condition with and without hydrogen dilution Materials Science and Engineering B-advanced Functional Solid-state Materials. ,vol. 128, pp. 44- 49 ,(2006) , 10.1016/J.MSEB.2005.11.003
Yuxia Wang, Haiping He, Lianwei Wang, Duo Liu, Honggao Tang, Thermochemical process occurring in PLD-derived SiC films during vacuum annealing Applied Surface Science. ,vol. 193, pp. 204- 209 ,(2002) , 10.1016/S0169-4332(02)00500-7
Andrea Carlo Ferrari, Determination of bonding in diamond-like carbon by Raman spectroscopy Diamond and Related Materials. ,vol. 11, pp. 1053- 1061 ,(2002) , 10.1016/S0925-9635(01)00730-0
J Wei, Y Gao, DH Zhang, P Hing, ZQ Mo, None, Growth of SiCN films by magnetron sputtering Surface Engineering. ,vol. 16, pp. 225- 228 ,(2000) , 10.1179/026708400101517198
Y. Tawada, J. Takada, N. Fukada, M. Yamaguchi, H. Yamagishi, K. Nishimura, M. Kondo, Y. Hosokawa, K. Tsuge, T. Nakayama, I. Hatano, Stability of an amorphous SiC/Si tandem solar cell with blocking barriers Applied Physics Letters. ,vol. 48, pp. 584- 586 ,(1986) , 10.1063/1.96474
Lawrence R. Doolittle, Algorithms for the rapid simulation of Rutherford backscattering spectra Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. ,vol. 9, pp. 344- 351 ,(1985) , 10.1016/0168-583X(85)90762-1