A Novel Method of Synthesizing Graphene for Electronic Device Applications.
作者： Nierlly Galvão , Getúlio Vasconcelos , Rodrigo Pessoa , João Machado , Marciel Guerino
DOI: 10.3390/MA11071120
关键词: Silicon carbide 、 High-power impulse magnetron sputtering 、 Optoelectronics 、 Graphene 、 Laser 、 Wafer 、 Materials science 、 Thin film 、 Thermal decomposition 、 Sheet resistance
摘要: This article reports a novel and efficient method to synthesize graphene using thermal decomposition process. In this method, silicon carbide (SiC) thin films grown on Si(100) wafers with an AlN buffer layer were used as substrates. CO₂ laser beam heating, without vacuum or controlled atmosphere, was applied for SiC decomposition. The physical, chemical, morphological, electrical properties of the laser-produced investigated different energy densities. results demonstrate that produced in form small islands quality, density, depending density. Furthermore, exhibited sheet resistance characteristic similar mono-crystalline wafers, which indicates its potential electronic device applications.
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