Thermochemical process occurring in PLD-derived SiC films during vacuum annealing
作者： Yuxia Wang , Haiping He , Lianwei Wang , Duo Liu , Honggao Tang
DOI: 10.1016/S0169-4332(02)00500-7
关键词: X-ray photoelectron spectroscopy 、 Chemistry 、 Infrared spectroscopy 、 Thin film 、 Analytical chemistry 、 Absorption spectroscopy 、 Pulsed laser deposition 、 Annealing (metallurgy) 、 Activation energy 、 Chemical vapor deposition
摘要: Abstract Compositional change on the surface of PLD-derived SiC films during vacuum (10 −3 Pa) annealing was investigated by using Fourier transform-infrared absorption (FT-IR) and X-ray photoelectron spectroscopy (XPS) measurements. The as-deposited film consisted only a small amount Si–C bonds, abundant in CC component. With an increase temperature from 800 to 950 °C, SiC bond increased, component decreased. were slightly oxidized residual O 2 at temperatures lower than 950 °C. When reached 1000 °C, dropped sharply, accompanied production ∼72 at.% SiSi which surprisingly high. A model oxidation based loss C atoms formation bonds adopted explain experimental results. activation energy for 22.5±2.6 kcal/mol, as calculated FT-IR data.
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