Growth and characterization of thin Si80C20 films based upon Si4C building blocks
作者： J. Kouvetakis , D. Chandrasekhar , David J. Smith
DOI: 10.1063/1.120876
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摘要: The growth of thin Si80C20 diamond-structured material on (100)Si has been achieved using the novel C–H free, carbon source tetrasilyl methane, C(SiH3)4. precursor decomposes at temperatures in range 600–700 °C to give amorphous layers with a composition Si0.80C0.20, which corresponds same relative concentrations Si and C as precursor. is crystallized via solid-phase epitaxy by annealing 825 °C yield potentially ordered structure Si4C tetrahedra are linked together three-dimensional diamond-cubic framework. Measured lattice parameters larger than expected from Vegards’ Law, discrepancy attributed steric repulsions causing bond elongation.
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