Quantum Mechanical TCAD Study of Epitaxial SiGe Thermistor Layers
作者： Frank Niklaus , Fredrik Forsberg , Mohammadreza Kolahdouz , Gunnar Malm
DOI:
关键词: Thermistor 、 Formalism (philosophy of mathematics) 、 Thermal coefficient 、 Optoelectronics 、 Mechanical engineering 、 Quantum 、 Predictive simulation 、 Epitaxy 、 Materials science
摘要: The thermal coefficient of resistance (TCR) for epitaxial silicon-germanium (SiGe) layers has been analyzed by experiment and simulation. Predictive simulation using drift-diffusion formalism s ...
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