Carbon-doped single-crystalline SiGe/Si thermistor with high temperature coefficient of resistance and low noise level

作者: H. H. Radamson , M. Kolahdouz , S. Shayestehaminzadeh , A. Afshar Farniya , S. Wissmar

DOI: 10.1063/1.3524211

关键词:

摘要: … The simulations of the fully strained SiGe/Si quantum well structure … and the carbon-doping in the Si barrier layer. 6. T. … The effect of silicidation and carbon-doping ( Si 0.99 C 0.01 barrier …

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