The performance improvement evaluation for SiGe-based IR detectors
作者： M. Kolahdouz , A. Afshar Farniya , M. Östling , H.H. Radamson
DOI: 10.1016/J.SSE.2011.01.010
关键词:
摘要: During recent years, single crystalline (Sc) SiGe has been recognized as a new low cost thermistor material for IR detection. In this study the effect of Ge content, pixel size and Ni silicide on performance SiGe/Si have presented. The noise level was decreased more than one order magnitude when layer integrated below metal contacts. silicidation slightly improved TCR values detectors (+0.22%/K). However, increasing content had most significant TCR. A statistical analysis applied to evaluate each parameter. Using factorial method, it realized that decreasing would enhance value.
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