Ge/SiGe Quantum Well p-i-n Structures for Uncooled Infrared Bolometers
作者： Fatih Bilge Atar , Alper Yesilyurt , Mehmet Cengiz Onbasli , Oguz Hanoglu , Ali K. Okyay
关键词: Materials science 、 Germanium 、 Silicon 、 Silicon-germanium 、 Temperature coefficient 、 Quantum well 、 Temperature measurement 、 Infrared 、 Bolometer 、 Optoelectronics
摘要: The temperature dependence of current is investigated experimentally for silicon-germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient resistance values high -5.8%/K are recorded. This value considerably higher than that even commercial materials in addition to being well above the previous efforts based CMOS compatible materials.
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