An all-ZnO microbolometer for infrared imaging

摘要: Abstract Microbolometers are extensively used for uncooled infrared imaging applications. These units generally employ vanadium oxide or amorphous silicon as the active layer and nitride absorber layer. However, using different materials layers increases fabrication integration complexity of pixel structure. In order to reduce steps therefore increase yield cost arrays, a single can be employed both material. this paper, we propose an all-ZnO microbolometer, where atomic deposition grown zinc is Optical constants ZnO measured fed into finite-difference-time-domain simulations absorption performances microbolometers with gap size film thicknesses extracted. Using results these optical simulations, thermal conducted finite-element-method in extract noise equivalent temperature difference (NETD) time constant values several bolometer structures sizes, arm thicknesses. It shown that maximum performance 171 mK achieved body thickness 1.1 μm 50 nm, while fastest response 0.32 ms 150 nm arms body.