Single layer microbolometer detector pixel using ZnO material

摘要: This paper presents the development of a single layer microbolometer pixel fabricated using only ZnO material coated with atomic deposition. Due to stress-free nature and high temperature coefficient resistance ALD material, it can be used both as structural active layers in detectors. The design, simulations, fabrication optimization 35 μm microbolometers are shown this study. designed has thermal conductance 3.4x10-7 W/K time constant 1.34 ms while maximum displacement 0.43 under 1000g acceleration. structure decrease design complexities costs increase yield detectors making them possible low-cost applications.