Micromachined poly-SiGe bolometer arrays for infrared imaging and spectroscopy

摘要: The state-of-the-art characteristics of micromachined polycrystalline SiGe microbolometer arrays are reported. An average NETD 85 mK at a time constant 14 ms is already achievable on typical self-supported 50 μm pixels in linear 64-element array. In order to reach these values, the design optimization was performed based performance 32-, 64- and 128-element 50-, 60- 75-μm-pixel bolometers several detector lots. infrared thermal modeling accounting for read-out properties self-heating effect resulted improved designs competitive values 80 160x128 format standard frame rates f-number 1. parallel, TCR-to-1/f noise ratio mechanical were making poly-SiGe good candidate low-cost uncooled technological CMOS-based process possesses an attractive balance between price, allows micromachining thin structures, less than 0.2 μm. resistance TCR non-uniformity with σ/μ better 0.2% combined 99.93% yield demonstrated. first lots fully processed have come from IMEC line results characterization presented. Next year, small 2D will be introduced market.