Performance comparison of 1200V Silicon and SiC devices for UPS application
作者： James McBryde , Arun Kadavelugu , Bobby Compton , Subhashish Bhattacharya , Mrinal Das
DOI: 10.1109/IECON.2010.5675125
关键词: Uninterruptible power supply 、 Logic gate 、 Diode 、 Electrical engineering 、 Insulated-gate bipolar transistor 、 Silicon 、 Silicon carbide 、 Materials science 、 MOSFET 、 Inverter
摘要: … same IGBT without the co-packaged diode, FGL40N120AN was paired with a Cree SiC 20A … silicon IGBT/Diode and the next generation SiC MOSFET/JBS Diodes are presented in this …
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