High-Speed Resonant Gate Driver With Controlled Peak Gate Voltage for Silicon Carbide MOSFETs
作者： Philip Anthony , Neville McNeill , Derrick Holliday
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摘要: Parasitic inductance in the gate path of a silicon carbide MOSFET places an upper limit upon switching speeds achievable from these devices, resulting unnecessarily high losses due to introduction damping resistance into path. A method reduce is proposed, using resonant driver absorb parasitic path, enabling resistor be removed. The voltage maintained at desired level feedback loop. Experimental results for 1200-V are presented, demonstrating loss 230 μJ 800 V and 10 A. This represents 20% reduction comparison that conventional drive methods.
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