Investigation of the effect of different Bi 2 O 3 – x :PVA ( x = Sm, Sn, Mo) thin insulator interface-layer materials on diode parameters
作者： Yusuf Badali , Yashar Azizian-Kalandaragh , İbrahim Uslu , Şemsettin Altindal
DOI: 10.1007/S10854-020-03343-5
关键词: Materials science 、 Analytical chemistry 、 Nanomaterials 、 Metal 、 Semiconductor 、 Diode 、 Fabrication 、 Schottky diode 、 Saturation current 、 Insulator (electricity)
摘要: In this work, Au/4H–SiC Schottky diodes with different Bi2O3–x:PVA (x = Sm, Sn, Mo) thin insulator interface layer were produced for the fabrication of metal/insulator/semiconductor (MIS) structures. The effect interfacial deposited between metal and semiconductor on important optical electrical parameters was investigated. main prepared structures such as saturation current (I0), barrier height (ΦB0), ideality factor (n), series shunt resistance (Rs Rsh) obtained from I‒V characteristics. discrepancies in these can be ascribed to use nanomaterials an interlayer. Moreover, values n, ΦB0, Rs also extracted by using Cheung Norde functions results compared each other. energy dependence states [Nss vs (Ec − Ess)] investigated taking into account voltage Φe(V) n(V). addition, Ln(I)–Ln(V) plots drawn specify possible transport mechanisms Experimental show that (Bi2O3–Sn:PVA) (Bi2O3–Sm:PVA) interlayers yield higher RR Rsh lower Io values. This provides evidence performance increase MS
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