Cs bonding at the Cs/GaAs(110) interface.
作者： G. Faraci , A. R. Pennisi , F. Gozzo , S. La Rosa , G. Margaritondo
关键词: Overlayer 、 Evaporation 、 Atomic physics 、 Analytical chemistry 、 Covalent bond 、 Saturation (magnetic) 、 Materials science 、 Monolayer 、 Polarization (electrochemistry) 、 Photoemission spectroscopy 、 Dangling bond
摘要: Evaporation of a Cs overlayer in the submonolayer and monolayer regime on cleaved GaAs(110) surface has been studied by core-level photoemission spectroscopy. The experimental results show three different adsorption regimes deduced from lineshape Ga 3d, As 3d 4d core levels. These spectra, fact, result overlap contributions that have identified as function coverage: (a) at low deposition prevalent Cs-As binding small percentage Cs-Ga bonds are observed; (b) intermediate coverage strong increase bonds, with reduction feature, is attributed to disruption covalent pristine Ga-As out-diffusion; (c) highest coverage, relative intensity component goes saturation, whereas initial strongly reduced high density dangling restored. nonlocal polarization interface quite limited charge transfer detected though low-energy shift importance these emphasized respect promoted oxidation semiconductor.
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