Surface plasmon enhanced InGaN light emitter
作者： Koichi Okamoto , Isamu Niki , Alexander Shvartser , George Maltezos , Yukio Narukawa
DOI: 10.1117/12.592261
关键词: Light-emitting diode 、 Indium gallium nitride 、 Plasmon 、 Surface plasmon 、 Materials science 、 Surface plasmon resonance 、 Photoluminescence 、 Light emission 、 Gallium nitride 、 Optoelectronics
摘要: We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW), obtained by covering these sample surface with thin metallic films. Remarkable enhancements of PL peak intensities were In 0.3 Ga 0.7 N QWs 50 nm thick silver and aluminum coating 10 GaN spacer. These can be attributed to strong interaction between plasmons (SPs). No such samples coated gold, as its well-known plasmon resonance occurs only at longer wavelengths. also showed that QW-SP coupling internal efficiencies measuring temperature dependence intensities. is very promising method for developing super bright light emitting diodes (LEDs). Moreover, we found metal nano-structure important facto decide extraction. A possible mechanism emission enhancement has been developed, high-speed efficient predicted optically well electrically pumped emitters.
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