Materials analysis with a position-sensitive atom probe

作者: A. Cerezo , T. J. Godfrey , C. R. M. Grovenor , M. G. Hetherington , R. M. Hoyley

DOI: 10.1111/J.1365-2818.1989.TB00584.X

关键词: Atom probeMicroscopeDetectorField ion microscopeResolution (electron density)Mass spectrometryIonChemistrySemiconductorAnalytical chemistry

摘要: SUMMARY A position-sensitive detector has been combined with time-of-flight mass spectrometry in the atom probe field-ion microscope to yield a system which both chemical identity and spatial information are obtained for individual ions field-evaporated from specimen surface. This allows variations composition originally present sample be reconstructed 3-D sub-nanometre resolution. The prototype is being used study phase chemistry number of metallurgical alloys, including accurate determination 1–2 nm Cu-rich precipitates formed Fe–1.3% Cu–1.4%Ni aged peak hardness. Other applications (POSAP) include analysis surface layers on superconductors studies semiconductor multiple quantum wells. These initial instrument reported, limitations intended improvements discussed.

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