Ultrahigh density vertical nand memory device and method of making thereof
作者： Johann Alsmeier , Vinod Robert Purayath , Henry Chien , George Matamis , Yao-Sheng Lee
DOI:
关键词: Gate oxide 、 Perpendicular 、 NAND gate 、 Electrical engineering 、 Blocking (radio) 、 Optoelectronics 、 Materials science 、 Substrate (printing) 、 Semiconductor 、 Communication channel 、 Dielectric
摘要: Monolithic, three dimensional NAND strings include a semiconductor channel, at least one end portion of the channel extending substantially perpendicular to major surface substrate, plurality control gate electrodes having strip shape parallel blocking dielectric comprising segments, discrete charge storage and tunnel located between each segments channel.
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