Vertical cross-point memory arrays
作者： David A. Eggleston , Louis C. Parrillo , Bruce L. Bateman , Lidia Vereen
DOI:
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摘要: A method of manufacturing a memory structure includes forming plurality vertically-stacked horizontal line layers, interleaving electrically conductive vertical lines with the lines, and film at between intersections lines. In one embodiment invention, are interleaved such that row is positioned each horizontally-adjacent pair in layer. By configuring so unit cell footprint just 2F 2 may be realized.
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