Formation method of titanium nitride film in contact hole structure for technical nodes of 28nm and below

摘要: The invention discloses a formation method of titanium nitride film in contact hole structure for technical nodes 28nm and below. comprises the steps: performing first deposition on substrate at opening treatment so as to form initial layer; second titaniumnitride layer body layer, wherein thickness is less than thethickness sum thicknesses same required structure. two times time deposited are changed formed thinner time, plasma load can be reduced exhaust gas process that barrier having resistance value meeting requirements, enhanced filling capacity good continuity obtained.