作者: Murray Conal , Yang Chih-Chao
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摘要: A metal interconnect structure can be fabricated within an integrated circuit (IC). recess created in IC dielectric layer and a surface modulation liner formed by depositing two different metallic elements onto the surfaces of recess. One element have standard electrode potential greater than metal, other less metal. filling remainder with which is physically separated from liner. The topography modulated polishing process, removing top portion