Power Amplifiers Based on SiC Technology for MHD Mode Control in Fusion Experiments

作者: Elena Gaio , Alberto Ferro , Luca Novello , Makoto Matsukawa

DOI: 10.1109/TPS.2016.2569451

关键词: VoltageSwitching timeComputer scienceResistive touchscreenBandwidth (signal processing)Insulated-gate bipolar transistorJunction temperatureAmplifierTokamakElectrical engineering

摘要: The effective control of magnetohydrodynamic instabilities in fusion experiments by means actively controlled coils calls for challenging dynamic requirements to the relevant power supply (PS) systems. first part this paper gives an overview on typical and technological solutions adopted some present experiments. Then, advantages SiC devices with respect Si ones are described paper, including lower switching losses, higher speed, operating junction temperature, voltage capability. As application example, reports case PS system resistive wall mode JT-60SA satellite tokamak, where analyses showed difficulty satisfying demanding terms high current bandwidth (3 kHz) short latency ( $ ) a simple H-bridge topology adopting standard IGBT. On contrary, use Si–SiC IGBT same can allow meeting specifications, as demonstrated development test such amplifier, rated $300~A_{{\mathrm{pk}}}$ 240 V.

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