Development of Ultrahigh-Voltage SiC Devices
作者： Kenji Fukuda , Dai Okamoto , Mitsuo Okamoto , Tadayoshi Deguchi , Tomonori Mizushima
关键词:
摘要: … In this paper, we developed novel SiC bipolar devices and reported on SiC pin diodes p-… (IGBTs) and novel flip-type n-channel IGBTs along with the switching test of these SiC devices. …
harvard.edu
sci-hub.se 参考文章(15)
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