Design, fabrication and characterization of mesa combined with JTE termination for high-voltage 4H-SiC PiN diodes
作者： Xiaochuan Deng , Han Xiao , Jia Wu , Huajun Shen , Chengzhan Li
DOI: 10.1016/J.SPMI.2015.09.004
关键词:
摘要: Abstract Mesa combined with JTE termination structures for high-voltage 4H–SiC PiN diodes are designed, fabricated, and characterized in this paper. Designs based on simulation performed to investigate the influence of mesa shape breakdown SiC diodes. It is found that a deeper height smaller angle contribute higher voltage owing smoother more uniform surface electric field distribution. A maximum reverse blocking 3.8 kV an on-state drop 3.4 V at 100 A/cm 2 obtained from fabricated 2.1 μm 22°, corresponding about 80% parallel plane drift layer thickness 30 μm. Additionally, dependence length observed shows good agreement simulated results trend.
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