A New Edge Termination Technique for High-Voltage Devices in 4H-SiC–Multiple-Floating-Zone Junction Termination Extension
作者： Woongje Sung , Edward Van Brunt , B. J. Baliga , Alex Q. Huang
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摘要: A new edge termination method, referred to as multiple-floating-zone junction extension (MFZ-JTE), is presented for high-voltage devices in 4H-SiC. 4H-SiC PiN rectifiers with a breakdown voltage of 10 kV (about 88% the theoretical value) were fabricated using MFZ-JTEs. The MFZ-JTE technique only requires single pattern-and-implant step while providing significant process latitude parameter variations such implantation dose and activation anneal condition.
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sci-hub.se 参考文章(10)
B. Jayant Baliga, Fundamentals of Power Semiconductor Devices Springer. ,(2008) , 10.1007/978-0-387-47314-7
A. O. Konstantinov, Q. Wahab, N. Nordell, U. Lindefelt, Ionization rates and critical fields in 4H silicon carbide Applied Physics Letters. ,vol. 71, pp. 90- 92 ,(1997) , 10.1063/1.119478
R. Stengl, U. Gosele, C. Fellinger, M. Beyer, S. Walesch, Variation of lateral doping as a field terminator for high-voltage power devices IEEE Transactions on Electron Devices. ,vol. 33, pp. 426- 428 ,(1986) , 10.1109/T-ED.1986.22505
A. V. Bolotnikov, P. G. Muzykov, T. S. Sudarshan, Investigation of two-branch boron diffusion from vapor phase in n-type 4H-SiC Applied Physics Letters. ,vol. 93, pp. 052101- ,(2008) , 10.1063/1.2968306
X. Wang, James A. Cooper, Optimization of JTE Edge Terminations for 10 kV Power Devices in 4H-SiC Materials Science Forum. pp. 1257- 1262 ,(2004) , 10.4028/WWW.SCIENTIFIC.NET/MSF.457-460.1257
Stanislav I. Soloviev, Ying Gao, Yuri I. Khlebnikov, I.I. Khlebnikov, Tangali S. Sudarshan, Aluminum and Boron Diffusion into (1-100) Face SiC Substrates Materials Science Forum. pp. 557- 560 ,(2002) , 10.4028/WWW.SCIENTIFIC.NET/MSF.389-393.557
Toru Hiyoshi, Tsutomu Hori, Jun Suda, Tsunenobu Kimoto, Simulation and Experimental Study on the Junction Termination Structure for High-Voltage 4H-SiC PiN Diodes IEEE Transactions on Electron Devices. ,vol. 55, pp. 1841- 1846 ,(2008) , 10.1109/TED.2008.926643
Alexander V. Bolotnikov, Peter G. Muzykov, Qingchun Zhang, A. K. Agarwal, T. S. Sudarshan, Junction Termination Extension Implementing Drive-in Diffusion of Boron for High-Voltage SiC Devices IEEE Transactions on Electron Devices. ,vol. 57, pp. 1930- 1935 ,(2010) , 10.1109/TED.2010.2051246
R. Ghandi, B. Buono, M. Domeij, G. Malm, C.-M. Zetterling, M. Ostling, High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension IEEE Electron Device Letters. ,vol. 30, pp. 1170- 1172 ,(2009) , 10.1109/LED.2009.2030374
J.H. Zhao, P. Alexandrov, X. Li, Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes IEEE Electron Device Letters. ,vol. 24, pp. 402- 404 ,(2003) , 10.1109/LED.2003.813370