Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes
作者： J.H. Zhao , P. Alexandrov , X. Li
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摘要: This letter reports the demonstration of the first 4H-SiC Schottky barrier diode (SBD) blocking over 10 kV based on 115-μm n-type epilayers doped to 5.6× 10/sup 14/cm/sup-3/through the …
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