Fast Homoepitaxial Growth of 4H-SiC Films on 4° off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System
作者： Bin Liu , Guo-Sheng Sun , Xing-Fang Liu , Feng Zhang , Lin Dong
DOI: 10.1088/0256-307X/30/12/128101
关键词:
摘要: Homoepitaxial growth of 4H-SiC epilayers is conducted in a SiH4-C2H4-H2 system by low pressure hot-wall vertical chemical vapor deposition (CVD). Thick 45 μm are achieved at high rate up to 26 μm/h under an optimized condition, and characterized using Normaski optical microscope, scanning electronic microscope (SEM), atomic force (AFM) x-ray diffractometer (XRD), indicating good crystalline quality with mirror-like smooth surfaces rms roughness 0.9 nm 5 × 5μm area. The dependence the on conditions 4° off-axis substrates its mechanism investigated. It found that H2 flow could influence surface roughness, while morphologies without Si droplets epitaxial defects such as triangular be obtained increasing temperature.
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