Use of chlorinated carbon and silicon precursors for epitaxial growth of 4H-SiC at very high growth rates
作者： Siva Kotamraju , Bharat Krishnan , Yaroslav Koshka
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摘要: A possibility to apply the advantages of chlorinated carbon precursors, which had been previously used in low-temperature epitaxial growth 4H-SiC, achieve very high rates at higher temperatures was investigated. Silicon tetrachloride as silicon precursor suppress gas-phase homogeneous nucleation. The temperature increase from 1300 °C (which is reported halo-carbon growth) 1600 enabled an flow and consequently rate 5 more than 100 μm/h without morphology degradation. High quality epilayers confirmed by photoluminescence spectroscopy time-resolved luminescence. No evidences nucleation were detected, however, liquid Si droplet formation on epilayer surface seems remain a bottleneck rate. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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