Effect of HCl addition on gas-phase and surface reactions during homoepitaxial growth of SiC at low temperatures
作者： G. Melnychuk , H. D. Lin , S. P. Kotamraju , Y. Koshka
DOI: 10.1063/1.2975990
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摘要: A complex influence of HCl addition on gas-phase and surface reactions during the low-temperature halo-carbon homoepitaxial growth 4H-SiC was investigated. The employed to reduce undesirable effects homogeneous nucleation leading formation silicon clusters in gas phase. It established that dissociation by is efficient even at untraditionally low temperature below 1300 °C. information about spatial distribution this process along flow direction obtained. more complicated than simple model suggesting enhanced phase leads an additional supply species for epitaxial growth. While rate does significantly increase least some rates, changes effective silicon-to-carbon ratio zone reactor indicate th...
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