Differences between chloro‐carbon and hydro‐carbon precursors in low‐temperature epitaxial growth of 4H‐SiC
作者： Siva Kotamraju , Bharat Krishnan , Yaroslav Koshka
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摘要: The advantages of using the chlorinated carbon precursor chloromethane instead hydrocarbon propane in low-temperature (1300 °C) epitaxial growth 4H-SiC were investigated. Chloromethane was found to provide a much wider process window for variation C/Si ratio between lower boundary corresponding formation condensed silicon face and upper polytype inclusions polycrystalline degradation, which is critical achieving high rates without epilayer quality degradation. Use Cl/Si provided by HCl addition propane-based did not eliminate differences chloro-carbon hydro-carbon precursors. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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