High-speed homoepitaxy of SiC from methyltrichlorosilane by chemical vapor deposition
作者： Peng Lu , J.H. Edgar , O.J. Glembocki , P.B. Klein , E.R. Glaser
DOI: 10.1016/J.JCRYSGRO.2005.08.053
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摘要: … When the offset angle was 8, the epitaxial growth perfectly replicated the substrates’ … with the 8 off-axis angle, the quality of the epilayer deposited on the 4H-SiC substrate was similar to …
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