Woongje Sung
机构: CNSE, University at Albany
每年引用次数
引用次数
引用: 1,948
H-指数: 22
I10-指数 : 40
出版物: 118
A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop
Woongje Sung , Alex Q. Huang , B. Jayant Baliga
international symposium on power semiconductor devices and ic's 217 -220
22
2010
Assessing a Multi-Electron Beam Application Approach for Semiconductor Process Metrology
Maseeh Mukhtar , Bradley Thiel , Abner Bello , Alain Diebold
5
2018
Advancing Static Performance and Ruggedness of 600 V SiC MOSFETs: Experimental Analysis and Simulation Study
Woongje Sung , Nick Yun , Dongyoung Kim
international reliability physics symposium 1 -4
2021
On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET)
Woongje Sung , B. J. Baliga
IEEE Transactions on Industrial Electronics 64 ( 10) 8206 -8212
20
2017
Magnesium implant-activation in GaN: Impact of high-temperature annealing techniques on the state of implant induced defects and Mg activation (Conference Presentation)
Kasey Hogan , Sean Tozier , Milena Graziano , Michael Derenge
Gallium Nitride Materials and Devices XIV 10918
2019
A comparative study of channel designs for SiC MOSFETs: Accumulation mode channel vs. inversion mode channel
Woongje Sung , Kijeong Han , B. Jayant Baliga
international symposium on power semiconductor devices and ic's 375 -378
12
2017
Developing 13-kV 4H-SiC MOSFETs: Significance of Implant Straggle, Channel Design, and MOS Process on Static Performance
Nick Yun , Dongyoung Kim , Justin Lynch , Adam J. Morgan
IEEE Transactions on Electron Devices 67 ( 10) 4346 -4353
1
2020
Design and Fabrication Approaches of 400–600 V 4H-SiC Lateral MOSFETs for Emerging Power ICs Application
Nick Yun , Woongje Sung
IEEE Transactions on Electron Devices 67 ( 11) 5005 -5011
2020
A Comparative Study of Gate Structures for 9.4-kV 4H-SiC Normally On Vertical JFETs
Woongje Sung , Edward Van Brunt , B. Jayant Baliga , Alex Q. Huang
IEEE Transactions on Electron Devices 59 ( 9) 2417 -2423
11
2012
Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness
Dongyoung Kim , Adam J Morgan , Nick Yun , Woongje Sung
international reliability physics symposium 1 -6
1
2020
Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices
Woongje Sung , B. Jayant Baliga , Alex Q. Huang
IEEE Transactions on Electron Devices 63 ( 4) 1630 -1636
51
2016
A Comparative Study 4500-V Edge Termination Techniques for SiC Devices
Woongje Sung , B. Jayant Baliga
IEEE Transactions on Electron Devices 64 ( 4) 1647 -1652
20
2017
Accumulation channel vs. inversion channel 1.2 kV rated 4H-SiC buffered-gate (BG) MOSFETs: Analysis and experimental results
Kijeong Han , B. Jayant Baliga , Woongje Sung
international symposium on power semiconductor devices and ic s
1
2018
Design Considerations for High Voltage SiC Power Devices: An Experimental Investigation into Channel Pinching of 10kV SiC Junction Barrier Schottky (JBS) Diodes
Jusitn Lynch , Nick Yun , Woongje Sung
international symposium on power semiconductor devices and ic s 223 -226
12
2019
The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor
Woongje Sung , Alex Q. Huang , B. J. Baliga , Inhwan Ji
international symposium on power semiconductor devices and ic's 257 -260
6
2015
10kV SiC MPS diodes for high temperature applications
Yifan Jiang , Woongje Sung , Xiaoqing Song , Haotao Ke
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 43 -46
12
2016
Demonstration and analysis of a 600 V, 10 A, 4H-SiC lateral single RESURF MOSFET for power ICs applications
Nick Yun , Justin Lynch , Woongje Sung
Applied Physics Letters 114 ( 19) 192104
4
2019
Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height
Yifan Jiang , Woongje Sung , Jayant Baliga , Sizhen Wang
Journal of Electronic Materials 47 ( 2) 927 -931
2
2018
An Efficient Design Approach to Optimize the Drift Layer of Unipolar Power Devices in 4H-SiC
Sundar Babu Isukapati , Woongje Sung
IEEE Journal of the Electron Devices Society 8 176 -181
2020
A New Edge Termination Technique for High-Voltage Devices in 4H-SiC–Multiple-Floating-Zone Junction Termination Extension
Woongje Sung , Edward Van Brunt , B. J. Baliga , Alex Q. Huang
IEEE Electron Device Letters 32 ( 7) 880 -882
84
2011