A comparative study of channel designs for SiC MOSFETs: Accumulation mode channel vs. inversion mode channel
作者： Woongje Sung , Kijeong Han , B. Jayant Baliga
DOI: 10.23919/ISPSD.2017.7988996
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摘要: This paper provides detailed comparison of electrical characteristics accumulation mode and inversion 1.2 kV SiC MOSFETs, including performance at high temperatures (up to 200 °C). Statistical data measured from over 50 dies on 6-inch wafers was used for this comparison. It is concluded that the MOSFET a lower specific on-resistance than due higher channel mobility (∼ 22 cm2/V·s) while achieving reasonable threshold voltage 2.3 V). Based statistical analyses, strong correlation between field effect identified.
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