Accumulation-layer electron mobility in n-channel 4H-SiC MOSFETs
作者： K. Chatty , T.P. Chow , R.J. Gutmann , E. Arnold , D. Alok
DOI: 10.1109/55.919232
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摘要: Accumulation-layer electron mobility in n-channel depletion-mode metal oxide semiconductor field effect transistors (MOSFETs) fabricated 4H-SiC was investigated using Hall-measurements. The accumulation-layer showed a smooth transition from the bulk value (/spl sim/350 cm/sup 2//V-s) depletion regime into accumulation sim/200 2//V-s). In contrast, field-effect mobility, extracted transconductance, found to be much lower sim/27 2//V-s), due trapping of field-induced carriers by interface states. Though current depletion/accumulation-mode MOSFETs can high contribution conduction resulting low on-resistance, carrier will cause transconductance regime.
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