The planar 6H-SiC ACCUFET: a new high-voltage power MOSFET structure
作者： P.M. Shenoy , B.J. Baliga
DOI: 10.1109/55.644080
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摘要: … with the entire drain voltage supported by the P N-drift junction. Since this PN … [7], the device is expected to have a high breakdown voltage. When a positive … drift region doped at 10 cm …
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sci-hub.se 参考文章(9)
L. A. Lipkin, J. W. Palmour, Improved oxidation procedures for reduced SiO 2 /SiC defects Journal of Electronic Materials. ,vol. 25, pp. 909- 915 ,(1996) , 10.1007/BF02666657
S.T. Sheppard, M.R. Melloch, J.A. Cooper, Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiC IEEE Transactions on Electron Devices. ,vol. 41, pp. 1257- 1264 ,(1994) , 10.1109/16.293356
J.B. Casady, A.K. Agarwal, L.B. Rowland, W.F. Valek, C.D. Brandt, 900 V DMOS and 1100 V UMOS 4H-SiC power FETs device research conference. pp. 32- 33 ,(1997) , 10.1109/DRC.1997.612463
M. Ruff, H. Mitlehner, R. Helbig, SiC devices: physics and numerical simulation IEEE Transactions on Electron Devices. ,vol. 41, pp. 1040- 1054 ,(1994) , 10.1109/16.293319
A. K. Agarwal, R. R. Siergiej, S. Seshadri, M. H. White, P. G. McMullin, A. A. Burk, L. B. Rowland, C. D. Brandt, R. H. Hopkins, Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power Umosfet Structures MRS Proceedings. ,vol. 423, pp. 87- ,(1996) , 10.1557/PROC-423-87
P.M. Shenoy, B.J. Baliga, Planar, ion implanted, high voltage 6H-SiC P-N junction diodes IEEE Electron Device Letters. ,vol. 16, pp. 454- 456 ,(1995) , 10.1109/55.464815
J.N. Shenoy, J.A. Cooper, M.R. Melloch, High-voltage double-implanted power MOSFET's in 6H-SiC IEEE Electron Device Letters. ,vol. 18, pp. 93- 95 ,(1997) , 10.1109/55.556091
M. Bhatnagar, B.J. Baliga, Comparison of 6H-SiC, 3C-SiC, and Si for power devices IEEE Transactions on Electron Devices. ,vol. 40, pp. 645- 655 ,(1993) , 10.1109/16.199372
Dev Alok, B.J. Baliga, P.K. McLarty, Low contact resistivity ohmic contacts to 6H-silicon carbide international electron devices meeting. pp. 691- 694 ,(1993) , 10.1109/IEDM.1993.347218