Comparison of 6H-SiC, 3C-SiC, and Si for power devices
作者： M. Bhatnagar , B.J. Baliga
DOI: 10.1109/16.199372
关键词: Power MOSFET 、 Surface coating 、 Optoelectronics 、 MOSFET 、 Breakdown voltage 、 Materials science 、 Current density 、 Electrical engineering 、 Schottky diode 、 Power semiconductor device 、 Semiconductor device
摘要: … considered two polytypes of Sic, 6H- and 3C-SiC, which are likely to be the materials of choice for Sic power device fabrication. Advantages of 6H-SiC, also known as a-Sic, are its large …
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