Experimental Analysis of 600V 4H-SiC Vertical and Lateral MOSFETs Fabricated on the same 6-Inch Substrate Using a Single Process
作者： Nick Yun , Justin Lynch , Woong Je Sung
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.1004.830
关键词: Single process 、 Optoelectronics 、 Materials science 、 Substrate (printing)
摘要:
sci-hub.st 参考文章(9)
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