Edge-Termination Technique for High-Voltage Mesa-Structure 4H-SiC Devices: Negative Beveling

摘要: The prospects for the protection of high-voltage 4H-SiC-devices from edge breakdown via formation mesa structures with inclined walls (negative beveling) are considered. Numerical simulation spatial electric-field distribution in (~1500V) reverse-biased mesa-epitaxial p+–p–n0–n+ 4H-SiC diodes is performed. It shown that negative beveling small angles less than 10° plane p–n0 junction makes it possible to reduce severalfold surface electric field as compared bulk. A combined method suggested edge-termination technique a p+–n0–n+ structure, Schottky an n0 blocking base, and bipolar n+–p–n0 transistors implantation boron along beveling. possibility fabricating photolithography dry etching silicon carbide briefly discussed.