Silicon germanium photodetector
作者： Sergey Luryi , John Condon Bean , Thomas Perine Pearsall
DOI:
关键词: Photodetector 、 Cladding (fiber optics) 、 Materials science 、 Silicon 、 Conductivity 、 Optoelectronics 、 Silicon-germanium
摘要: This invention embodies a photodector comprising first cladding layer of silicon (e.g. 3) having conductivity type, second 7) type and an interleaved region 5) positioned between the two layers, alternating layers GexSil-x GeySil-x wherein x is greater than 0.0 y less or equal to l.0, l.0.
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