Silicon photosensitive element
作者： Toru Tasumi
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摘要: A groove is formed on the surface of a silicon substrate by way etching. device for driver photosensitive element where not formed. With groove, super lattice structure Si and Si1-x Gex buried to form photosensing portion. The portion with an avalanche photodiode or PIN diode. have no step substrate. On other hand, SOI oxide layer provided back side BY this, photo reflection SiO2 below Thus, type can be common chip simultaneously reducing production cost improving sensitivity converting efficiency element.
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