High Pressure Oxidation of Silicon in Dry Oxygen
作者： Liang N. Lie , Reda R. Razouk , Bruce E. Deal
DOI: 10.1149/1.2123687
关键词: Silicon 、 Oxygen 、 Oxide 、 Thermal oxidation 、 Atmospheric temperature range 、 Analytical chemistry 、 Kinetics 、 Activation energy 、 Wafer 、 Materials science
摘要: … of silicon at high pressure is gaining importance through applications in high density VLSI … Oxide charges in dry 02 high pressure grown silicon dioxide films were found to be compatible …
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