Silicon Oxidation Models Based on Parallel Mechanisms
作者： C. R. Helms , J. de Larios
DOI: 10.1007/978-1-4899-0774-5_3
关键词:
摘要: It has been suggested by numerous workers over the years that multiple mechanisms acting in parallel might be responsible for growth of thermal oxides on silicon. The most obvious example such an effect is oxidation “wet” O2 where both H2O and act to oxidize In this paper these models will reviewed light more recent data, suggest a new model based combination mechanisms.
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