Formation of Dislocation Loops at Low Temperatures in Quenched Aluminum

作者: Michio Kiritani , Takahiro Nishikawa , Sho Yoshida

DOI: 10.1143/JPSJ.27.67

关键词: Vacancy defectTwo stepWell-definedAluminiumRange (particle radiation)Condensed matter physicsImpurityQuenchingDislocationMaterials science

摘要: Formation of dislocation loops in aluminum below room temperature down to -90°C is studied by the two step aging method after quenching. The beginning stage vacancy clustering similar that around temperature, small clusters growing have a fairly wide range their size weak bindings and well defined nucleus loop does not exist. It concluded main part played quenched-in di-vacancies, especially at low temperatures. Two kinds influences impurity atoms are found. major influence enhance formation loops, but increase stability enough make stable nuclei loops.

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